PART |
Description |
Maker |
ACS758KCB-150B-PFF-T ACS758KCB-150B-PSS-T ACS758KC |
Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 Current Conductor
|
Allegro MicroSystems
|
STW9B12C |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PPC440EP-3UC667C PPC440EP-3TC667C PPC440EP-3UC667C |
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, ROHS COMPLIANT, THERMALLY ENHANCED, PLASTIC, BGA-456 32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, THERMALLY ENHANCED, PLASTIC, BGA-456
|
Applied Micro Circuits, Corp.
|
PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PTFA070601E PTFA070601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
PTFA092201E PTFA092201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
|
Infineon Technologies AG
|